Obtaining The Ni80Fe20 Thin Film Smoothness Through The Capasitance Value Of Film In The R-C Serial Device

Toifur, Moh. (2013) Obtaining The Ni80Fe20 Thin Film Smoothness Through The Capasitance Value Of Film In The R-C Serial Device. [Artikel Dosen] (Submitted)

Text C 31 2013 toifur-smoothing curve.pdf Download (1MB)

Abstract

Capacitive properties of Ni80Fe20 thin film as the result of sputtering on the various
deposition field (Bdep) from 0 up to 600 G was reached. The aim of the research is to determine the
smoothness of film with investigating the capacitance due to film porosities, and the performance
of film as low pass filter. Device constitute of the resistor R = 769.9  serially connected with a
film. Device was supplied with AC voltage from AFG. Investigating the capacitive properties was
done on the 100 kHz frequency, while investigating the cut-off frequency was done in the range of
100 up to 1000 kHz. The output and input voltage were investigated through oscilloscope. From
investigating the capacitive properties show that all samples display capacitive properties. The
lowest capacitance according to the sample resulted from deposition on the Bdep of 300 G that is
0.09 pF, which is show the smoothest film compared with others.
Key words: capacitance, sputtering

Item Type:	Artikel Dosen
Subjects:	Q Science > QC Physics
Divisi / Prodi:	Faculty of Teacher Training and Education (Fakultas Keguruan dan Ilmu Pendidikan) > S2-Masters in Physics Education (S2-Pendidikan Fisika)
Depositing User:	Dr., M.Si. Moh Toifur
Date Deposited:	27 May 2020 09:27
Last Modified:	27 May 2020 09:27
URI:	http://eprints.uad.ac.id/id/eprint/18924

Actions (login required)

View Item